综述了目前光电转换效率达到25%的单结非聚光晶体硅基太阳能电池研究的最新进展，阐述发射极钝化-背部局域扩散电池结构、叉指背接触结构、异质结结构和异质结背接触结构太阳能电池高效率的原因，并结合我国硅基光伏产业现状进行了发展趋势预测和技术需求分析。

We report the fabrication of widely tunable ridge waveguide distributed Bragg reflector (DBR) lasers with InGaAsP butt-joint as grating material. The shape of the butt–joint interface is found to have significant effect on the properties of the lasers. It is shown that irregular mode jumps during wavelength tuning can be avoided by a V-shaped butt–joint interface. From the fabricated device, 23 channels with 0.8 nm spacing and greater than 35 dB side mode suppression ratios are obtained. The different tuning characteristics of the ridge waveguide and the previously reported buried ridge stripe DBR lasers are discussed. Combined with the wide tuning range and the simple structure, the ridge waveguide DBR lasers are promising for use in wavelength division multiplexing passive optical networks (WDM-PONs).

采用选择区域外延生长技术和对接再生长技术，设计并制作了10信道分布反馈激光器阵列与多模干涉耦合器的单片集成器件。器件中采用了新的技术，集成了钛薄膜热电阻用于波长调谐。集成器件烧结到热沉上后，在25 ℃温控条件下测试，激光器阵列的平均信道间隔为1.29 nm，阈值电流为22~30 mA；当激光器注入电流为200 mA，各信道的平均出光功率为0.5 mW。集成热电阻的调谐效率约为5 nm/W,通过施加合适的热电流调谐,该集成器件可以覆盖34路信道间隔为50 GHz的波长范围。集成器件可单波长选择输出，也可10信道同时运作合波输出。

采用飞秒激光扫描P型单晶硅衬底上的碲单质膜层，实现了碲元素在硅中的N型掺杂，随后利用准分子激光对掺杂样品进行退火处理，制备了碲掺杂硅单晶材料。利用该材料研制出了在室温下具有高响应的碲掺杂硅探测器。在-4 V的反向偏压下，光电响应在1000 nm处达到0.86 A/W，外量子效率大于106.6%；随着反向偏压的增加，光电响应增加，同时截止波长向红外方向拓展，在-8 V偏压下，截止波长达到了1235 nm；在-16 V偏压下，测得响应在1080 nm处最高达到3.27 A/W。

Selective area growth (SAG) is performed to fabricate monolithically integrated distributed feedback (DFB) laser array by adjusting the width of a SiO2 mask. A strain-compensated-barrier structure is adopted to reduce the accumulated strain and improve the quality of multi-quantum well materials. Varying the strip width of the SAG masks, the DFB laser array with an average channel spacing of 1.47 nm is demonstrated by a conventional holographic method with constant-pitch grating. The threshold current from 14 to 18 mA and over 35-dB side mode suppression ratio (SMSR) are obtained for all DFB lasers in the array.

在密集波分复用系统中，多波长DFB激光器阵列与多模干涉耦合器集成光源器件具有重要的应用前景.为了研制多波长集成光源中的宽带可用低损耗光耦合器,利用三维有限差分光束传播法仿真设计了一种具有强限制作用的InP/InGaAsP材料的多模干涉型耦合器.输入/输出端波导均采用楔形结构以降低多模干涉型耦合器的插入损耗,提高各个输出端口的出光平衡度.根据仿真结果,结合波导芯层为采用外延生长设备,采用反应离子刻蚀工艺制作了1×乘4多模干涉型耦合器.利用自动对准波导耦合测试系统对所制作器件的插入损耗和出光平衡度进行测量.测试结果表明,该器件在1 550 nm波长附近的40 nm带宽范围内获得了约2.6 dB的通带平坦度,在1 550 nm通信波长处,器件的插入损耗低于10 dB.

A two-section offset quantum-well structure tunable laser with a tuning range of 7 nm was fabricated using offset quantum-well method. The distributed Bragg reflector (DBR) was realized just by selectively wet etching the multiquantum-well (MQW) layer above the quaternary lower waveguide. A threshold current of 32 mA and an output power of 9 mW at 100 mA were achieved. Furthermore, with this offset structure method, a distributed feedback (DFB) laser was integrated with an electro-absorption modulator (EAM), which was capable of producing 20 dB of optical extinction.

A novel 1.55-μm spot-size converter integrated electroabsorption modulator was designed with conventional photolithography and chemical wet etching process. A ridge double-core structure was employed for the modulator, and a buried ridge double-core structure was incorporated for the spot-size converter. The passive waveguide was optically combined with a laterally tapered active waveguide to control the mode size. The figure of merit is 4.1667 dB/V(/100 μm) and the beam divergence angles in the horizontal and vertical directions were as small as 11.2 deg. and 13.0 deg., respectively.

A kind of novel broad-band superluminescent diodes (SLDs) using graded tensile-strained bulk InGaAs is developed. The graded tensile-strained bulk InGaAs is obtained by changing only group-III trimethyl-gallium source flow during low-pressure metal organic vapor-phase epitaxy. At the injection current of 200 mA, the fabricated SLDs with such structure demonstrate full-width at half-maximum spectral width of 106 nm and the output light power of 13.6 mW, respectively.

An improved butt coupling method is used to fabricate an electroabsorption modulator (EAM) monolithically integrated with a distributed feedback (DFB) laser. The obtained electroabsorption-modulated laser (EML) chip with the traditional shallow ridge exhibits very low threshold current of 12 mA, output power of more than 8 mW, and static extinction ratio of -7 dB at the applied bias voltage from 0.5 to -2.0 V.